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Nanotechnology Carbon Nanotube CNT SWNT - Free download reports papers articles on Carbon nanotube nanotechnology. About nanotechnology carbon nanotube, Introduction to Carbon nanotube nanotechnology.

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P. Giannozzi
Scuola Normale Superiore di Pisa and DEMOCRITOS-INFM Seminario all’Universita` di Udine, 2005/11/28

Download -- Intimate relationship between structural deformation and properties of single-walled carbon nanotubes and its hydrogenated derivatives

Abstract: Carbon nanotubes continue to surprise scientists with their novel properties. Recently we have discovered many intimate relationships between structural deformation and the properties of single-walled nanotubes (SWNT) that could be important in technological applications. From the first-principles we show that by using pressure, carbon nanotubes can be covalently joined to form one and two-dimensional networks of interlinked nanotubes. We also found that the band gap of an insulating nanotube can be engineered by elliptical distortion, which is found to be in the elastic range. This could allow the fine-tuning of the properties of SWNTs via reversible deformation and ultimately lead to variable quantum devices. Finally, we have shown that the chemical reactivity of nanotubes can be tuned by elliptical deformation, which may provide a way to attach various atoms such as H and metals to a specific location on a nanotube. In particular, we have studied hydrogenated carbon nanotubes for a large number of configurations and hydrogen coverage. We show that the electronic and atomic structure of carbon nanotubes undergo dramatic changes with hydrogen chemisorption. The first principle calculations indicate that selective bonding of hydrogen to nanotubes can give rise to a number of potentially useful applications in the emerging field of molecular electronics


Download-- Electronic Structure of Doped Fullerenes and Single Wall Carbon Nanotubes

Abstract. Soft x-ray absorption and emission spectroscopy is being used to study and compare the electronic structure of (a) potassium doped single wall carbon nanotubes (interstitial dopant) etc etc.








Download -- Measurement of Electronic Properties of Carbon Nanotubes with Intermittent-Contact AFM


Download -- Structure determination of individual single-wall carbon nanotubes by nanoarea electron diffraction











In this letter, we report an electron diffraction determination of chiral vectorsn,m of individual single-wall carbon nanotubesSWNTs. Electron diffraction patterns from individual SWNTs were recorded on imaging plates using a parallel electron beam over a section of tube of50 nm long. Using two tubes of 1.39 and 3.77 nm in diameter, we show that the details of electron diffuse scattering can be detected for both the small and large tubes. The quality of diffraction patterns allows the accurate measurement of both the diameters and chiral angles of SWNTs for a direct determination of chiral vectors.The electron diffraction technique is general and applicable to other forms of individual nanostructures.

Electrical properties and devices of large-diameter single-walled carbon nanotubes



Electronic transport through carbon nanotubes - effect of contacts, topological defects, dopants and chemisorbed impurities



February 16, 2005
Nanotech 2005
Anaheim, CA, United States
May 8, 2005 through May 12, 2005








Structural and electronic properties of the Metal-metal intramolecular junctions of single-walled carbon nanotubes

Abstract. Several intramolecular junctions (IMJs) connecting two metallic (11, 8) and (9, 6) carbon nanotubes along their common axis have been realized by using a layer-divided technique to the nanotubes and introducing the topological defects. Atomic structure of each IMJ configuration is optimized with a combination of density-functional theory (DFT) and the universal force field (UFF) method, based upon which a four-orbital tight-binding calculation is made on its electronic properties. Different topological defect structures and their distributions on the IMJ interfaces have been found, showing decisive effects on the localized density of states, while the s-p coupling effect is negligible near Fermi energy. Finally, a new IMJ model has been proposed, which probably reflects a real atomic structure of the M-M IMJ observed in the experiment [Science 291, 97 (2001)]

Single-Walled Carbon Nanotube Electronics

Abstract—Single-walled carbon nanotubes (SWNTs) have Fig. 1(a). Its band structure is quite unusual; it has conducting emerged as a very promising new class of electronic materials. states at , but only at specific points along certain directions The fabrication and electronic properties of devices based on in momentum space at the corners of the first Brillouin zone, as individual SWNTs are reviewed. Both metallic and semicon- ducting SWNTs are found to possess electrical characteristics is seen in Fig. 1(b). It is called a zero-bandgap semiconductor that compare favorably to the best electronic materials available. since it is metallic in some directions and semiconducting in the Manufacturability issues, however, remain a major challenge.













Computational studies of Carbon Nanostructures




1 Examining Nonlinear Properties of Single-Wall Carbon Nanotube (SWNT) Films Using the Z-scan Method

Abstract Nonlinear optical properties of single-wall carbon nanotube (SWNT) films called Bucky- paper were examined using the Z-scan method. Both baked and unbaked samples were tested. Though the exact nonlinear index of refraction (n2) could not be determined, an -11 2 -10 2 upper bound of 5.97 x 10 cm /W for the unbaked sample and 2.32 x 10 cm /W for the baked sample was calculated for n2. There values are roughly two orders of magnitude smaller than predicted by theory, and two orders of magnitude larger than those found for SWNT in solution.





Electrical properties and devices of large-diameter single-walled carbon nanotubes


Individual large-diameter 3 to 5 nm semiconducting single-walled carbon nanotubes SWNTs are found to exhibit ambipolar field-effect transistor FET behavior, with easily accessible n- and p -conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs in this relatively large-diameter regime. The ambipolar SWNT-FETs can be readily used as building blocks for functional nanoelectronic devices such as voltage inverters that operate under ambient conditions. © 2002 American Institute of Physics. DOI: 10.1063/1.1448850





Nano Electro Mechanics of Semiconducting Carbon Nanotube

The effect of a flattening distortion on the electronic properties of a semiconducting carbon nanotube is investigated through first-principles calculations. As a function of the mechanical deformation, electronic bandgap is reduced leading to a semiconductor-metal transition. However, further deformation reopens the bandgap and induces a metal- semiconductor transition. The semiconductor–metal transitions take place as a result of curvature-induced hybridization effects, and this finding can be applied to develop novel nano electro mechanical systems.


Single-Walled Carbon Nanotube Electronics

Single walled carbon nanotubes (SWNTs) have emerged as a very promising new class of electronic materials. The fabrication and electronic properties of devices based on individual SWNTs are reviewed. Both metallic and semiconducting SWNTs are found to possess electrical characteristics that compare favorably to the best electronic materials available. Manufacturability issues, however, remain a major challenge.









Photoinduced conductivity changes in carbon nanotube transistors

Photoinduced conductivity changes in single-walled carbon nanotube transistors have been examined. Low-intensity ultraviolet light significantly reduces the p -channel conductance while simultaneously increasing the n-channel conductance. A combination of optical absorption and electron transport measurements reveals that these changes occur without variations in dopant concentrations. Possible sites of oxygen photodesorption and its implications on the observed electronic properties of nanotubes are considered.









ELECTRONIC AND MECHANICAL PROPERTIES OF CARBON NANOTUBES

Interest in carbon nanotubes has grown at a very rapid rate because of their many exceptional properties, which span the spectrum from mechanical and chemical robustness to novel electronic transport properties. Their physics, chemistry and perspectives for applications are very challenging. Below we highlight the main results of the Lausanne group and their collaborators on transport, electron spin resonance, elastic and field emission properties of single wall (SWNT) and multi-wall (MWNT) carbon nanotubes.








Interactions between Individual Carbon Nanotubes Studied by Rayleigh Scattering Spectroscopy

The electronic properties of single-walled carbon nanotubes (SWNTs) are altered by intertube coupling whenever bundles are formed. These effects are examined experimentally by applying Rayleigh scattering spectroscopy to probe the optical transitions of given individual SWNTs in their isolated and bundled forms. The transition energies of SWNTs are observed to undergo redshifts of tens of meVs upon bundling with other SWNTs. These intertube coupling effects can be understood as arising from the mutual dielectric screening of SWNTs in a bundle.


Simulation of Single Walled Carbon Nano Tubes (SWNT)











Electronic Structure of Single Wall Carbon Nanotubes Studied by Resonant Inelastic X-Ray Scattering


Carbon nanotubes have in recent years attracted increasing interest as a new modification of carbon, related to the fullerenes and graphite. Especially for single wall carbon nanotubes (SWNTs) interesting electronic properties have been predicted early on. [1] For these nanotubes, the electronic structure strongly depends on the chirality vector defining the type of nanotube: (n, n) tubes ("armchair" type) are predicted to be metallic, while (n, m) tubes with n ? m are wide-gap or narrow-gap semiconductors, depending on the particular m and n. If 2n+m or n+2m is an integer multiple of 3, the SWNT is predicted to be a narrow-gap semiconductor with good room temperature conductivity.



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Electrical properties of single wall carbon nanotube reinforced polyimide composites










The nanostructure and electrical properties of SWNT bundle networks grown by an ‘all-laser’ growth process for nanoelectronic device applications


stacks.iop.org/Nano/15/S534







Conductivity of single-wall carbon nanotubes at pressures 20–50 GPa


Conductivity of single-wall carbon nanotubes (SWNT) produced by arc- discharge and laser ablation techniques [1] have been studied at pressures 20–50 GPa and temperatures 77–300 K. The dc conductivity measurements were carried out at room temperature in a diamond anvil cell (DAC) with anvils of the “rounded cone-plane” type made of synthetic carbonado-type diamonds [2], consisting of dielectric grains of synthetic diamonds in layers of conducting materials. These anvils are good conductors, permitting measurement of the resistance of samples placed between the anvils in the DAC by using the anvils as the electrical contacts to the sample. Conductivity of SWNT has activation nature in temperature range 77–300 K. Behavior of activation energy and mobility of charge carriers at pressures 32–37 GPa indicates probably the partial destruction of the walls of nanotubes with formation of pieces of the large sizes.







Electronics and Mechanics with Carbon Nanotubes

http://www.lassp.cornell.edu/lassp_data/mceuen/homepage/welcome.html


Production and related matter
Poster not very good in shape....





Electronics structure of condensed matter

In one-dimensional (1D) metals, the Fermi-liquid states applicable to 3D conventional metals become unstable to Coulomb interaction and the conduction electrons behave as a Tomonaga-Luttinger-liquid (TLL). This TLL state is characterized by interaction-dependent anomalous exponents seen in the correlation functions. Metallic single-wall carbon nanotubes (SWNTs) are con- sidered to be ideal 1D systems for realizing TLL states [1]. It is interesting to investigate directly the electronic states of SWNTs. The photoemission experiments were performed at BL-11D of KEK-PF and BL-1 of HiSOR [2]. SWNT samples were prepared by the laser vaporization method. The mean diameter of SWNTs in the sample is 1.37 nm.



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